Study of the physics of insulating films as related to the reliability of Metal-Oxide-Semiconductor (MOS) devices
Abstract
The enclosed papers discuss the trapped hole location and annihilation in Si, current and C-V instabilities in SiO2 at high fields, annealing of neutral electron traps in irradiated oxides, Al implanted into the SiO2 layer of MOS structures, electron trapping as a result of Al implantation, the initial oxidation regime of silicon oxidation and the electronic structure of SiO2, SixGe1-xO2, GeO2.
- Publication:
-
Semiannual Technical Report
- Pub Date:
- January 1977
- Bibcode:
- 1977ibm..reptS....D
- Keywords:
-
- Holes (Electron Deficiencies);
- Insulation;
- Metal Oxide Semiconductors;
- Silicon Dioxide;
- Aluminum;
- Germanium Alloys;
- Semiconductor Devices;
- Silicon Alloys;
- Electronics and Electrical Engineering