Evaluation of GaAs IMPATT diodes with high efficiency for space applications
Abstract
A reliability analysis of epitaxial GaAs IMPATT diodes for space applications is presented. The diodes were subjected to mechanical and climatic tests according to MIL STD 750 B. Long term reliability was evaluated using accelerated life tests. The median of the failure distribution function (assimilated with a lognormal law) is 10000 hours at Tj=180 C. This temperature corresponds to the operating conditions at 40 C ambient temperature of a monomesa diode producing 1.65 W at 11.2 GHz with 18% efficiency. Quadrimesa technology and similar ambient conditions lead to a median of 10 million hours. Error rate is 100 FIT: a value compatible with space applications. The main degradation mechanism is diffusion of the platinum barrier leading to drift of the characteristics.
- Publication:
-
Final Report Laboratoires d'Electronique et de Physique Appliquee
- Pub Date:
- March 1977
- Bibcode:
- 1977depa.rept.....B
- Keywords:
-
- Avalanche Diodes;
- Failure Analysis;
- Power Efficiency;
- Reliability Analysis;
- Spacecraft Electronic Equipment;
- Accelerated Life Tests;
- Component Reliability;
- Environmental Tests;
- Epitaxy;
- Gallium Arsenides;
- Microwave Oscillators;
- Electronics and Electrical Engineering