Characterization and growth of epitaxial layers of GaAs exhibiting high resistivity for ionic implantation
Abstract
Using classic epitaxial growth techniques at low temperatures, it is possible to control GaAs layer deposition on semi-isolant substrates while obtaining the desired purity and resistivity. Original characterization methods such as photohall and spectroscopy, in function of depth, show two regions. One is very pure and of high mobility; the other is a dead layer, nearer the substrate, very resistive and strongly compensated. This compensation is attributable to light acceptor diffusion (C, Cu) and deep center (Cr or Fe) diffusion, starting from interface. The implantation of Se ions in the layers makes possible FET devices with improved performance compared to direct implantation on the substrate.
- Publication:
-
Final Report Laboratoires d'Electronique et de Physique Appliquee
- Pub Date:
- December 1977
- Bibcode:
- 1977depa.rept......
- Keywords:
-
- Epitaxy;
- Field Effect Transistors;
- Gallium Arsenides;
- Ion Implantation;
- Acceptor Materials;
- Diffusion;
- Electrical Resistance;
- Semiconductors (Materials);
- Solid-State Physics