Ku band, low noise GaAs FETs
Abstract
A description is presented of an investigation in which electron beam lithography and ion implantation have been used to produce low noise GaAs FETs operating at up to 18 GHz. Highly reproducible devices are obtained with high yield. A modeling approach has also been developed which can be used to improve the device design. It is pointed out that farther extension of the reported work will permit operation into the K-band. A fabrication process which has been reported by Ozdemir and Wolf (1975) has been employed. The process steps are related to surface preparation, implant and anneal, photolithographic mesa pattern definition, mesa etching, photolithographic mesa benchmark pattern definition, metallization and liftoff, alloy ohmic contact, electron beam gate pattern definition, metallization and liftoff, and contact overlay metallization (photolithography).
- Publication:
-
Active Microwave Semiconductor Devices and Circuits
- Pub Date:
- 1977
- Bibcode:
- 1977amsd.proc..369L
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Low Noise;
- Electron Beams;
- Equivalent Circuits;
- Fabrication;
- Ion Implantation;
- Lithography;
- Network Synthesis;
- Superhigh Frequencies;
- Electronics and Electrical Engineering