Recent developments and future directions in millimeter wave IMPATT diode technology
Abstract
Device design, package and circuit development, power combining and reliability are discussed for IMPATT diodes in the frequency range of 30 to 300 GHz. Doping profiles and implantation design for double-drift IMPATT diodes are considered, with attention given to skin effect losses in the substrate and diamond heat sinking technology. Control of parasitic elements, especially at higher frequencies, is also an important problem in millimeter-wave IMPATT diode technology. In addition, problems associated with diode mounting, bias circuit design and chip-level power combining are mentioned.
- Publication:
-
Active Microwave Semiconductor Devices and Circuits
- Pub Date:
- 1977
- Bibcode:
- 1977amsd.proc...29M
- Keywords:
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- Avalanche Diodes;
- Microwave Equipment;
- Millimeter Waves;
- Technological Forecasting;
- Technology Assessment;
- Component Reliability;
- Design Analysis;
- Electronic Packaging;
- Microwave Circuits;
- Electronics and Electrical Engineering