Charge transfer performance of MOS bucket-brigade devices
Abstract
Proportional and fixed losses due to charge transfer inefficiency in MOS bucket brigade devices are calculated on the basis of simple models. Attention is given to losses due to the internal resistance of MOS transistors, the effect of subthreshold current, and feedback loss. Measured and calculated losses are compared for an MOS bucket brigade with a channel length of 6 microns, and the efficiency of the bucket brigade device is compared with that of a charge coupled device.
- Publication:
-
Siemens Forschungs und Entwicklungsberichte
- Pub Date:
- 1977
- Bibcode:
- 1977SiFoE...6..245A
- Keywords:
-
- Bucket Brigade Devices;
- Charge Transfer;
- Metal Oxide Semiconductors;
- Transmission Loss;
- Charge Coupled Devices;
- Electric Current;
- Electrical Resistance;
- Transistor Circuits;
- Volt-Ampere Characteristics;
- Waveforms;
- Electronics and Electrical Engineering