Construction of a low noise microwave transistor amplifier for the ELRA receiving channel

The construction of a single-stage low noise 2.72 GHz microwave-preamplifier is described. The nose 2-port, gain, and stability of a microwave transistor are discussed on a theoretical basis. The performance results of the preamplifier in microstrip technique are 2.3 db noise figure, an associated gain of 11.8 db, and a +3.6 dbm power output at 1 db gain compression point. The transistor 35866 E Option 100 was used for the preamplifier and HXTR 6101 for the amplifier.