Modelling of static and dynamic properties of transistors on the analogue computer

Techniques in generating transistor models, by measuring characteristics on a real transistor and comparing them with characteristics of an idealized transistor, were described. Reproduction of static properties of a transistor on the analogue computer was investigated through models and simulation. Shockley equations were utilized in modelling. Dynamic properties were modelled using emitter diffusion, emitter barrier layer, collector diffusion, and collector barrier layer capacitances.