Top collector contacted microwave power transistor. Monolithic microwave lumped element integrated circuit program, phase 2

This report covers the work on Naval Research Contract No. N00014-75-C-0405 (Top Collector Contacted Microwave Power Transistor). The objective of the contract is to investigate the monolithic integrated circuit approach for the fabrication of RF power transistors and associated matching networks to eliminate hand working, wire bonding and to provide improved uniformity, yield, reliability and ultimately, lower cost. Specifically, Phase II of this work calls for an isolated all top contacted 30 watt, 1.5 GHz power transistor. The devices meet or exceed all the contract requirements (30 watt at 1.5 GHz with 7 dB gain). The final processes used and the best results are discussed.