Functioning of power rectifiers and thyristors
Abstract
The influence of the recombination properties of the different silicon layers in power rectifiers and thyristors of the forward characteristics and the dynamic behavior is discussed quantitatively, taking into account Auger recombination. This leads to more exact dimensioning guidelines for the development of technical devices. A scaling down of the arrangement of the shorts in shorted emitters of thyristors improves the dv/dt capability and recovery time but leads to an impaired plasma spreading. The conditions needed to avoid current channelling at thyristor turn-on were investigated. A thyristor that can be ignited by exceeding its breakover voltage was developed, as well as a thyristor for 10 kHz applications and thyristor that turns on without current channelling. Insight into the processes taking place inside power rectifiers during commutation was gained with a simple theoretical model.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- May 1977
- Bibcode:
- 1977STIN...7726402B
- Keywords:
-
- Electrical Faults;
- Rectifiers;
- Switching;
- Thyristors;
- Auger Effect;
- Carrier Injection;
- Electric Ignition;
- Emitters;
- Neutron Activation Analysis;
- Recombination Reactions;
- Short Circuits;
- Silicon;
- Electronics and Electrical Engineering