The photoeffect in silicon planar positional photon-detectors with a high resistivity doped channel
Abstract
A positional photon-detector is proposed on the basis of a silicon microresistor with a p-type high resistivity diffused or implanted channel on an n-type substrate. The experimental study of the photoeffect in the photon-detectors is performed in photo-cell mode with a light probe of variable position. A simple theoretical model explaining the carrier generation along the high resistivity doped channel is discussed for the one dimensional case.
- Publication:
-
Solid State Electronics
- Pub Date:
- December 1977
- DOI:
- 10.1016/0038-1101(77)90210-6
- Bibcode:
- 1977SSEle..20..999V
- Keywords:
-
- Electro-Optics;
- P-N Junctions;
- Photons;
- Photovoltaic Effect;
- Position Indicators;
- Silicon Radiation Detectors;
- Carrier Mobility;
- Electrical Resistivity;
- Photoelectric Cells;
- Instrumentation and Photography