The metal-overlap laterally-diffused (mold) Schottky diode
Abstract
A novel uniform-field/breakdown structure is described consisting of a planar metal-overlap laterally-diffused (MOLD) Schottky diode. This structure has been demonstrated to be free of edge breakdown by numerical two-dimensional calculations. Experimentally obtained aluminum-silicon MOLD Schottky diodes have shown near-ideal characteristics in terms of breakdown voltage, reverse I-V characteristics and forward I-V characteristics. The barrier height determined from forward current measurements (zero-volts intercept and activation-energy plot) is 0.74 V.
- Publication:
-
Solid State Electronics
- Pub Date:
- January 1977
- DOI:
- 10.1016/S0038-1101(77)81006-X
- Bibcode:
- 1977SSEle..20..499R