A review of some charge transport properties of silicon
Abstract
This paper reviews the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices. Therefore, most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties. Phenomenological expressions are given, when possible, for the most important transport quantities as functions of temperature, field or impurity concentration. The discussion is limited to bulk properties, with only a few comments on surface transport.
- Publication:
-
Solid State Electronics
- Pub Date:
- February 1977
- DOI:
- 10.1016/0038-1101(77)90054-5
- Bibcode:
- 1977SSEle..20...77J
- Keywords:
-
- Carrier Mobility;
- Charge Carriers;
- Drift Rate;
- Electron Diffusion;
- Silicon;
- Transport Properties;
- Diffusion Coefficient;
- Electric Fields;
- Electron Mobility;
- Holes (Electron Deficiencies);
- Impurities;
- Solid State Devices;
- Solid-State Physics