A dual-gate GaAs FET RF power limiter
Abstract
This report describes a preliminary investigation of a novel RF power limiter-amplifier that makes use of a recently developed dual-gate GaAs FET stage with a small-signal gain of 7 dB and a compressive gain slope (when overdriven) of 14.8 dB at the unity gain point. When operated in the power-limiting mode, several cascaded stages of this amplifier can be used to drive a companion FET discriminator to provide unambiguous frequency-to-voltage conversion.
- Publication:
-
RCA Review
- Pub Date:
- June 1977
- Bibcode:
- 1977RCARv..38..253R
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Gates (Circuits);
- High Gain;
- Limiter Circuits;
- Power Amplifiers;
- Cascade Control;
- Microwave Amplifiers;
- Network Synthesis;
- Power Efficiency;
- Power Gain;
- Transistor Circuits;
- Electronics and Electrical Engineering