Characteristics of semiconductor resistance strain gages in elastic waves
Abstract
Experiments were conducted to study the behavior of resistance strain gages, based on p-type whisker crystals of silicon, in elastic strain waves at a temperature of 20 C. It is shown that at strain rates of 130/s, the dynamic coefficient of strain sensitivity of the gage does not exceed the static coefficient by more than 4%. The feasibility of using these strain gages in shock loading tests has been demonstrated.
- Publication:
-
Problemy Prochnosti
- Pub Date:
- June 1977
- Bibcode:
- 1977PrPro......116A
- Keywords:
-
- Elastic Waves;
- P-Type Semiconductors;
- Semiconductor Devices;
- Strain Gages;
- Whiskers (Crystals);
- Block Diagrams;
- Dynamic Characteristics;
- Impact Loads;
- Wave Fronts;
- Instrumentation and Photography