Gallium arsenide planar type transferred electron devices

The transferred electron mechanism is analyzed including the formation, drift of space charge domains, and domain dynamics. Schottky barrier gate-gunn effect digital devices (SBG-GEDDs) and two terminal transferred electron devices (TEDs) are compared. The current voltage relationships of SBG-GEDDs are analyzed in the low field region below the threshold of domain nucleation. Current voltage relationships in the dyanmic or domain nucleating region are also examined. These fundamental relationships are used to derive device characteristics such as trigger sensitivity, trigger capability, low field resistance, power consumption, amplification, integrated load resistor, fanout, unidirectionality, time constants, and power delay product. Experimental transferred electron devices fabricated and tested at domain oscillation frequencies of one to three gigahertz are described. A procedure developed for the fabrication of experimental devices and test setups for the various conditions are documented.