Analysis of bipolar transistors
Abstract
Recent developments in bipolar transistor analysis are discussed in the light of several previously published papers. The basic device equations are presented, including the influence of heavy doping, doping profile, mobility, and recombination. Numerical analysis of bipolar transistors is studied, a recently developed one-dimensional transistor analysis program is outlined, and calculated results are compared with measurements. This program uses experimentally determined values for the bandgap narrowing and minority-carrier lifetime as a function of impurity concentration. Measurements and calculations for bandgap narrowing are evaluated in detail. The direct consequences of this effect are examined for the emitter efficiency in normal transistors and in a transistor structure which has an extra emitter region with a low impurity concentration. Experimental results are compared with theory.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1977
- Bibcode:
- 1977PhDT........93S
- Keywords:
-
- Bipolar Transistors;
- Emitters;
- Network Analysis;
- Silicon Transistors;
- Transistor Circuits;
- Additives;
- Bandwidth;
- Carrier Injection;
- Carrier Lifetime;
- Electron Emission;
- Iterative Solution;
- Minority Carriers;
- Numerical Analysis;
- P-N Junctions;
- Electronics and Electrical Engineering