High-current injection modeling of semiconductor devices
Abstract
Numerical simulations and experimental measurements were carried out to study the transient behavior of the R(+)-N(-)-N(+) structure under different levels of injection in both the reverse and the forward pulsed directions. A major part of this research was devoted to the explanation of the anomalous voltage that appears across the diode terminals when pulsed in the forward direction with current densities in the range of 1000 to 1,000,000 amp/sq cm.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- October 1977
- Bibcode:
- 1977PhDT........74R
- Keywords:
-
- Computerized Simulation;
- High Current;
- Semiconductor Devices;
- Current Density;
- Semiconductor Junctions;
- Transient Response;
- Electronics and Electrical Engineering