The exact one-dimensional model of the double-insulated-gate field-effect device
Abstract
An accurate one dimensional model of the insulator and silicon regions in a double-insulated-gate field effect device is described. The model incorporates the principles of carrier current continuity in the insulators and carrier transport and current continuity in the silicon. Avalanche carrier generation and avalanche carrier injection mechanisms are included. The model is used to theoretically solve the transient response of the metal-silicon nitride-silicon dioxide-silicon structure with a silicon dioxide thickness of 50A.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1977
- Bibcode:
- 1977PhDT........52P
- Keywords:
-
- Electrical Insulation;
- Field Effect Transistors;
- Gates (Circuits);
- Avalanche Diodes;
- Metal-Nitride-Oxide-Silicon;
- Silicon;
- Transient Response;
- Electronics and Electrical Engineering