Electric current controlled liquid phase epitaxy of GaAs on N(+) and semi-insulating substrates: Growth parameters and doping modulation
Abstract
Growth was induced and sustained by current flow across the substrate-melt interface. The furnace temperature was held constant during growth so that direct electrical control of the growth process was achieved. The dependence of the growth rate on both the electric current density across the substrate-melt interface and the ambient furnace temperature was determined. In all cases, the measured growth rate greatly exceeds the values predicted by assuming that diffusion limited growth with no convection occurs in the presence of the temperature gradient established by Peltier cooling at the substrate-melt interface. Quantitative information about electric current controlled doping modulation was obtained from doping profile measurements performed on epilayers grown from unintentionally doped melts, tin doped melts, and tellurium doped melts.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- November 1977
- Bibcode:
- 1977PhDT........31L
- Keywords:
-
- Crystal Growth;
- Doped Crystals;
- Electric Current;
- Epitaxy;
- Gallium Arsenides;
- Liquid Phases;
- Current Density;
- Morphology;
- Substrates;
- Tellurium;
- Temperature Effects;
- Tin;
- Solid-State Physics