Hall Effect in Silicon Inversion Layers.

The magnetoconductance effect of a silicon inversion layer is studied both theoretically and experimentally. This effect is found due to the change of carrier scattering at the silicon surface by the magnetic field. The magnetoconductance effect can be explained by the change of carrier mobility as the result of surface scattering. A simple model of an electron moving in an inversion layer under magnetic field was proposed and found to provide a good qualitative interpretation of the phenomena. Next, the time required for a carrier to travel from the edge of the inversion layer to the silicon surface under a magnetic field is calculated. From this relation, it is possible to calculate the percentage change of conductance for a given magnetic field. Experimental results using n-channel MOS devices made on 100 ohm-cm p-silicon substrate will be presented. The experiment consists of a specially made liquid nitrogen dewar with an electro-magnet and testing equipments for testing the device at 77 deg. The maximum applied magnetic field is 16 kilogauss.