Infrared Charge Transfer Devices: The Silicon Approach
Abstract
Possible system applications of Infrared Charge Transfer Devices are reviewed. It is found that this device technology can have a very significant systems impact. Analyses are performed to calculate the quantum efficiency, quantum yield, frequency response, photoconductive gain, operating temperature, noise and the distinction between longitudinal and transverse bias configurations of silicon detectors. Tables of silicon detector properties are included. Approaches to the interface circuitry which couples the detectors and the CTD multiplexer are examined. Examples of existing low background and high background IRCTD detector arrays are given.
- Publication:
-
Optical Engineering
- Pub Date:
- June 1977
- DOI:
- 10.1117/12.7972144
- Bibcode:
- 1977OptEn..16..275N
- Keywords:
-
- Charge Transfer Devices;
- Infrared Detectors;
- Performance Prediction;
- Photosensitivity;
- Silicon;
- Background Noise;
- Energy Conversion Efficiency;
- Frequency Response;
- Integrated Circuits;
- Operating Temperature;
- Transition Temperature;
- Instrumentation and Photography