Dispersion of the nonlinear optical susceptibility of n-type germanium
Abstract
We observe a strong impurity-induced resonance in the third-order nonlinear optical susceptibility of n-type germanium. Our observations are used to obtain the cross-sections for electronic Raman scattering between the valley-orbit split 1s states of phosphorus and arsenic donors near 10 μm. Good agreement is found between measurements and calculations. The possibility of obtaining tunable impurity Raman laser action in n-type germanium is discussed.
- Publication:
-
Optics Communications
- Pub Date:
- April 1977
- DOI:
- 10.1016/0030-4018(77)90099-2
- Bibcode:
- 1977OptCo..21..154W
- Keywords:
-
- Germanium;
- Laser Materials;
- N-Type Semiconductors;
- Optical Properties;
- Raman Spectra;
- Scattering Cross Sections;
- Carbon Dioxide Lasers;
- Nonlinearity;
- Q Switched Lasers;
- Raman Lasers;
- Semiconductor Lasers;
- Lasers and Masers