Characteristics of the interaction of an oxygen gas-discharge plasma with a silicon surface

Investigations of the formation of a thin dielectric film and inversion layer on the surface of p-type silicon as a result of its interaction with an oxygen plasma were carried out. It is concluded that the observed effects are due to the saturation of a thin surface layer of silicon with the oxygen of high concentration in the region of the ion penetration depth. The oxygen and radiation defects generated by ion bombardment penetrate into silicon and create n-type centers. The measured diffusion length of radiation defects in silicon was found to be 0.41 micron.