Microwave Plasma Etching
Abstract
A new plasma etching technique using microwave discharge is presented. Silicon wafers are etched by the discharge in a (CF4+O2) gas mixture. Fine patterns with dimensions of 1 μm are etched up to 1 μm in depth without undercutting at a pressure of 5× 10-4 Torr with an Al mask having 0.08 μm thickness. Etching is thought to be carried out by chemical reactions. With this technique, the etching rate becomes maximum (2.6× 10-2 μm/min) when the mixing ratio γ is 20%. Symbol γ is the partial pressure of O2 divided by the total pressure. The etched depth is proportional to the etching time. This technique is suitable for etching fine patterns of semiconductor devices.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- November 1977
- DOI:
- 10.1143/JJAP.16.1979
- Bibcode:
- 1977JaJAP..16.1979S