Submillimeter-wave detection with submicron-size Schottky-barrier diodes
Abstract
Schottky-barrier diode detection has been extended to 7.2 THz (42 microns) using 0.5-micron-diam diodes. The diodes were fabricated on bulk-doped n-type GaAs using electron lithographic techniques; diameters as small as 1000 A have been achieved. A new approach in Schottky-barrier design, the contact array diode, is proposed. The diode is fabricated from readily available bulk doped material, and a performance is indicated that is competitive to the conventional epitaxial Schottky-barrier mixer well into the submillimeter wavelength region. A scanning electron microscope (SEM) photograph of diode array structures is shown.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- June 1977
- DOI:
- 10.1109/TMTT.1977.1129134
- Bibcode:
- 1977ITMTT..25..463M
- Keywords:
-
- Gallium Arsenides;
- Microwave Circuits;
- Schottky Diodes;
- Signal Detection;
- Submillimeter Waves;
- Additives;
- Electron Microscopes;
- Epitaxy;
- Equivalent Circuits;
- Fabrication;
- Lithography;
- N-Type Semiconductors;
- Signal Mixing;
- Electronics and Electrical Engineering