Theory of noise and transfer properties of IMPATT diode amplifiers
Abstract
An elementary equivalent circuit of a reflection-type negative resistance amplifier (NR AMP) is discussed in relation to the stable noise-free solution and perturbations in the sidebands; a practical circulator-coupled NR AMP is discussed, using the Read diode model. Diode nonlinearity is dealt with, and NR AMP transfer properties are elucidated. A Gunn diode is used in the NR AMP to satisfy requirements of low noise plus low output, or an IMPATT diode if high power levels are required. Large-signal noise generation mechanisms of the IMPATT diode in a NR AMP are analyzed.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- April 1977
- DOI:
- 10.1109/TMTT.1977.1129095
- Bibcode:
- 1977ITMTT..25..324G
- Keywords:
-
- Amplitude Modulation;
- Avalanche Diodes;
- Frequency Modulation;
- Microwave Amplifiers;
- Negative Resistance Devices;
- Signal To Noise Ratios;
- Circulators (Phase Shift Circuits);
- Electric Current;
- Equivalent Circuits;
- Noise Measurement;
- Phase Modulation;
- Electronics and Electrical Engineering