Analysis of the properties of three-terminal transferred-electron logic devices
Abstract
A two-dimensional analysis of Schottky-barrier gate GaAs logic devices utilizing the transferred-electron effect is described. The analysis is used to study the basic properties of two devices with anode to cathode spacing of 13 micron and 32 micron. The reduction in current drop due to the presence of the gate is discussed. The switching properties of the 13-micron device are studied for operation with either anode or cathode resistance. A gate delay of 30 ps and a total gate power of 180 mW is estimated.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- December 1977
- DOI:
- 10.1109/T-ED.1977.19013
- Bibcode:
- 1977ITED...24.1353C
- Keywords:
-
- Gallium Arsenides;
- Gates (Circuits);
- Gunn Effect;
- Logical Elements;
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Anodes;
- Cathodes;
- Design Analysis;
- Spacing;
- Switching Circuits;
- Transient Response;
- Electronics and Electrical Engineering