Design considerations for exponentially retrograded silicon hyperabrupt varactors
Abstract
Avalanche breakdown voltage, space-charge width at breakdown, and C-V index n of exponentially retrograded silicon hyperabrupt p(+)-n junctions have been calculated for various impurity distributions. Empirical relations are obtained expressing the first two parameters, and the maximum value of n in terms of impurity profile parameters of the retrograded region. Applications of these relations in the design of hyperabrupt varactors is indicated.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- October 1977
- DOI:
- 10.1109/T-ED.1977.18991
- Bibcode:
- 1977ITED...24.1261T
- Keywords:
-
- Capacitance;
- Electron Avalanche;
- P-N Junctions;
- Silicon Junctions;
- Varactor Diodes;
- Asymptotes;
- Avalanche Diodes;
- Design Analysis;
- Electric Potential;
- Impurities;
- Space Charge;
- Electronics and Electrical Engineering