Effects of doping profile on the performance of BARITT devices
Abstract
The effects of doping profile on the power output, efficiency, and operating frequency of BARITT devices are considered. An approximate analysis is presented as a guide for the design of such devices and shows the important parameters of the device. This is followed by a detailed computer simulation of various device structures and the inherent limitations of the approximate analysis are discussed. The computer simulations indicate that the Si and GaAs p(+)-n-i-p(+) and p(+)-n-p-p(+) structures are most promising with regard to power output and efficiency, respectively.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- September 1977
- Bibcode:
- 1977ITED...24.1154H
- Keywords:
-
- Carrier Injection;
- Computerized Simulation;
- Doped Crystals;
- Junction Diodes;
- Microwave Oscillators;
- P-N-P Junctions;
- Barrier Layers;
- Electric Fields;
- Gallium Arsenides;
- Performance Prediction;
- Profiles;
- Silicon Junctions;
- Transit Time;
- Electronics and Electrical Engineering