CMOS analog integrated circuits based on weak inversion operation
Abstract
A simple model describing the dc behavior of MOS transistor operating in weak inversion is derived on the basis of previous publications. This model includes only two parameters. It is verified experimentally for both p- and n-channel test transistors of a Si-gate low-voltage CMOS technology. Various circuit configurations taking advantage of weak inversion operation are described and analyzed: two different current references based on known bipolar circuits, an amplitude detector scheme which is then applied to a quartz oscillator with the result of a very low-power consumption (below 0.001 mW at 32 kHz), and a low-frequency bandpass amplifier. All these circuits are insensitive to threshold and mobility variations.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- June 1977
- DOI:
- 10.1109/JSSC.1977.1050882
- Bibcode:
- 1977IJSSC..12..224V
- Keywords:
-
- Analog Circuits;
- Field Effect Transistors;
- Integrated Circuits;
- Metal Oxide Semiconductors;
- Transistor Circuits;
- Bipolar Transistors;
- Capacitance;
- Circuit Diagrams;
- Crystal Oscillators;
- Direct Current;
- Inversions;
- Quartz Crystals;
- Silicon Transistors;
- Electronics and Electrical Engineering