Modeling the dynamic behavior of IIL
Abstract
The validity of the charge control approach is checked for the normal (upward) operation of an IIL gate, leading to the conclusion that deviations are mainly due to the distributed nature of the base resistance. An alternative method is presented to determine the relevant device parameters, starting from experimental data. An equivalent model, incorporating the distributed base resistance, is proposed and verified by simulating the power delay characteristics of ring oscillators.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- April 1977
- DOI:
- 10.1109/JSSC.1977.1050866
- Bibcode:
- 1977IJSSC..12..163M
- Keywords:
-
- Dynamic Models;
- Gates (Circuits);
- Integrated Circuits;
- Logic Circuits;
- Network Analysis;
- Transistor Circuits;
- Electrical Resistance;
- Equivalent Circuits;
- Frequency Response;
- Electronics and Electrical Engineering