The bent-guide structure AlGaAs-GaAs semiconductor laser
Abstract
The laser oscillation of GaAs-AlGaAs DH-structure laser with a bent guide was reported. The threshold current density (TCD) was about 3-15 kA/sq cm, and the longitudinal mode was single up to 1.7 times TCD. From the simulation experiments, it was concluded that this mode selectivity was due to the multicavity effect.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- August 1977
- DOI:
- 10.1109/JQE.1977.1069428
- Bibcode:
- 1977IJQE...13..560M
- Keywords:
-
- Emission Spectra;
- Gallium Arsenide Lasers;
- Laser Modes;
- Optical Waveguides;
- Semiconductor Lasers;
- Threshold Currents;
- Aluminum Compounds;
- Chips;
- Current Density;
- Laser Cavities;
- Optical Coupling;
- Optical Resonators;
- Lasers and Masers