Gallium arsenide spawns speed
Abstract
Digital monolithic IC based on GaAs MESFET and advantages of their applications are surveyed and explained. The basic workings of MESFET devices are reviewed and a special insert covers new developments in subnanosecond logic. High data rates, with handling of multigigabits per second, are emphasized. Direct measurement of microwave signal frequencies via digital frequency division, subnanosecond time resolution, synthesis of microwave frequencies with phase-locked loops and digital frequency dividers, and generation and processing of pulse trains at multigigabit/second data rates are emphasized. The normally-off MESFET for minimizing power drain (rather than maximizing speed) is described.
- Publication:
-
IEEE Spectrum
- Pub Date:
- March 1977
- Bibcode:
- 1977IEEES..14...40V
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Logic Circuits;
- Schottky Diodes;
- Digital Systems;
- Metal Surfaces;
- Microwave Circuits;
- Network Synthesis;
- Phase Locked Systems;
- Pulse Generators;
- Signal Processing;
- Time Response;
- Earth Science