On the role of macrorelief of semiconductor branches during their commutation in thermoelements

A study is made to determine the dependency of the mechanical strength of a semiconductor on the degree of roughness of its branches. Low-temperature thermoelectric materials based on Bi, Se, Te, and Sb are considered. The branches were formed by a technique of compression followed by annealing. Geometrical impurities of the backing are found to significantly influence nucleation during condensation. Two types of impurities are identified: macroscopic and microscopic. Using microphotographs and corresponding profilograms, the influence of macrodefects on the surface of semiconductor branches is studied.