X-band TRAPATT amplifiers
Abstract
A two-stage class-C X-band pulsed TRAPATT amplifier has been demonstrated, giving a maximum gain of 9.5 dB over a 1-dB bandwidth of 200 MHz at a center frequency of 9.4 GHz. The TRAPATT diodes have a silicon p(+)-n-n(+) structure with silver integral heat sinks and gold-button heat reservoirs. Single-stage amplifiers have been operated with input pulse widths of 0.5 microsec and gains of 5 dB, with 11% 3-dB bandwidths centered at 9.2 GHz.
- Publication:
-
Electronics Letters
- Pub Date:
- July 1977
- DOI:
- 10.1049/el:19770303
- Bibcode:
- 1977ElL....13..416O
- Keywords:
-
- Amplifier Design;
- Microwave Amplifiers;
- Superhigh Frequencies;
- Trapatt Devices;
- Avalanche Diodes;
- Heat Sinks;
- Power Amplifiers;
- Electronics and Electrical Engineering