Model of MOS field transistor in the range of small sourcedrain polarization voltages with frequency dispersion of the capacitance of the MIS structure
Abstract
A linear analysis of a model of an MOS field transistor with distributed parameters taking into account the frequency dispersion of the capacitance of the metalinsulatorsemiconductor structure is performed. Attention is restricted to the case of small sourcedrain polarization voltages for which one may assume a uniform distribution of parameters in the channel. Analytical expressions are derived for the transistor admittance parameters, and the equivalent circuit for low frequencies is obtained. Theoretical results are supported by measurements of the admittance parameters of a transistor as a function of the gate polarization function with respect to the base and as function of frequency.
 Publication:

Archiwum Elektrotechniki
 Pub Date:
 1977
 Bibcode:
 1977ArEle..26..159K
 Keywords:

 Capacitance;
 Field Effect Transistors;
 Frequency Distribution;
 Metal Oxide Semiconductors;
 Mis (Semiconductors);
 Channels (Data Transmission);
 Distributed Parameter Systems;
 Electrical Impedance;
 Linear Systems;
 Mathematical Models;
 VoltAmpere Characteristics;
 Electronics and Electrical Engineering