Electron and hole drift mobility in amorphous silicon
Abstract
Electron and hole drift mobility have been measured in n- and p-type amorphous Si Schottky-barrier solar cells. At room temperature μdn= (2-5) ×10-2 cm2/V sec and μdp= (5-6) ×10-4 cm2/V sec. Both mobilities are trap controlled with ΔE=0.19 eV for electrons and ΔE=0.35 eV for holes above 250 °K and ΔE=0.16 and 0.26 eV, respectively, below 250 °K. Majority-carrier lifetimes are estimated to be 1 μsec for electrons and 25 μsec for holes.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 1977
- DOI:
- 10.1063/1.89539
- Bibcode:
- 1977ApPhL..31..762M
- Keywords:
-
- Amorphous Semiconductors;
- Amorphous Silicon;
- Electron Mobility;
- Hole Mobility;
- Schottky Diodes;
- Solar Cells;
- Life (Durability);
- N-Type Semiconductors;
- P-Type Semiconductors;
- Room Temperature;
- Trapped Particles;
- Solid-State Physics;
- 73.30.+y;
- 84.60.Jt;
- 72.20.Jv;
- 72.80.Ng;
- Surface double layers Schottky barriers and work functions;
- Photoelectric conversion: solar cells and arrays;
- Charge carriers: generation recombination lifetime and trapping;
- Disordered solids