Determination of surface recombination velocity in heavily doped silicon
Abstract
A method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.
- Publication:
-
International Symposium on Solar Energy
- Pub Date:
- 1976
- Bibcode:
- 1976soen.symp..283W
- Keywords:
-
- Doped Crystals;
- Photovoltaic Cells;
- Recombination Coefficient;
- Silicon Junctions;
- Solar Cells;
- Surface Properties;
- Energy Conversion Efficiency;
- P-N Junctions;
- Semiconducting Films;
- Solid-State Physics