Special EBS devices

This Final Report describes the fabrication and testing of five GaAs Schottky-barrier EBS tubes. To improve the Schottky-Barrier characteristics and the reliability of the EBS diode, we have used platinum as the barrier metal rather than chromium. To reduce the electrical resistance, a chromium layer was deposited on top of the platinum layer. Both theoretical calculations and experimental results indicate that a Schottky-barrier metallization system consisting of 100-A Pt plus 300-A Cr is nearly optimum for EBS-application. Special EBS tubes employing GaAs platinum Schottky-barrier diodes with integral beam shield were successfully fabricated, evaluated, and delivered to the contracting agency.