Semiconductor measurement technology

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. The emphasis is on silicon device technologies. Principal accomplishments included (1) preliminary results of a systematic study of the effects of surface preparation on spreading resistance measurements; (2) development of an optical test for surface quality of sapphire; (3) development of a basis for an exposure sensitivity specification for photoresists; and (4) development of a modular cell concept for test structure design and layout. Four-probe resistivity measurements, comparison of techniques for surface analysis, ion microprobe mass analysis, redistribution profiles, and thermally stimulated current response of interface states are stipulated.