Integrated injection logic (I2L). Comparative and design trade-off evaluation
Abstract
Electrical parameters and radiation susceptibility of integrated injection logic (I2L) microcircuit circuit technology are reviewed. Comparisons are drawn between I2L and other contemporary LSI microcircuit technologies such as TTL, Schottky-clamped TTL, ECL, p-MOS, n-MOS, CMOS and CMOS/SOS. Performance parameters considered include cell density, switching speed, power dissipation, speed-power product, output drive capability and temperature range. Radiation effects considered are those of neutron damage, long-term ionization damage, electrical pulsed overstress damage and transient photoresponse. Trade-offs in electrical performance parameters and radiation susceptibility are suggested for 'conventional' I2L design. Critical design considerations in I2L are electrical switching response, noise margin and neutron damage susceptibility. On the other hand, I2L is of potential major advantage in the parameters of power dissipation, temperature range, long-term ionization damage susceptibility and transient photoresponse.
- Publication:
-
Topical Report
- Pub Date:
- December 1976
- Bibcode:
- 1976mrc..rept.....R
- Keywords:
-
- Integrated Circuits;
- Large Scale Integration;
- Logic Circuits;
- Microelectronics;
- Metal Oxide Semiconductors;
- Radiation Damage;
- Schottky Diodes;
- Silicon;
- Technology Assessment;
- Electronics and Electrical Engineering