Multiphonon Raman scattering in Si and AlAs
Abstract
Resonance Raman scattering in semiconductors with indirect band gaps has been investigated in order to manifest the contribution of the iterative electron-one phonon process to second-order Raman scattering. The authors have searched without success for Raman peaks associated with intervalley scattering among multivalleys. Three- and four-phonon features in Si and AlAs have been observed and are compared with the two-phonon scattering strength.
- Publication:
-
Presented at 3d Intern. Conf. on Light Scattering in Solids
- Pub Date:
- March 1976
- Bibcode:
- 1976lss..conf...93K
- Keywords:
-
- Aluminum Compounds;
- Arsenides;
- Phonons;
- Raman Spectra;
- Silicon Compounds;
- Backscattering;
- Band Structure Of Solids;
- Molecular Energy Levels;
- Semiconductors (Materials);
- Solid-State Physics