Non linear analysis of three terminal avalanche devices

The influence of a thermionic type injected current on the performances of GaAs IMPATT diodes for large signal conditions is studied. This theoretical approach is developed by using the computer program previously elaborated for high efficiency IMPATT diodes. The parameters used to vary the operating conditions are the RF level, injection phase, dc current multiplication factor and base collector doping profile. Interesting results in the X band can be expected with a transistor-like device in which the transistor effect, avalanche effect, and transist time effect are used together.