The use of molecular sprays in ultrahigh vacuum for GaAs monocrystalline growth applications

A technique for growing GaAs single crystal layers on a semiconducting substrate was improved under laboratory conditions. A molecular spray is used in an ultrahigh vacuum for depositing epitaxial layers. This makes possible the control of the flux rate by mass spectrometry while using solid arsenic as a source product. Mobility and photoluminescence were improved over previous results. Epitaxial layers were obtained, doping with tin, being doped at the rate of 5 x 10 to the 16th power to 5 x 10 to the 17th power/cu cm and having a mobility of 3000 to 3600 sq cm (1/V) (1/S).