Thermodynamic characteristics of the III-V semiconductor pseudobinary alloys
Abstract
The thermodynamics of binary solutions are discussed, taking into account solutions for which the relative integral excess free energy of mixing may be expressed in terms of a single-interaction parameter. An investigation is conducted of a number of systems, including the InSb-GaSb system, the GaSb-GaAs system, the InAs-GaAs system, the InP-GaP system and the GaAs-GaP system. Attention is given to questions regarding the physical basis for the origin of the excess free energy and the thermodynamic significance of the interaction parameter of the pseudobinary systems.
- Publication:
-
Zeitschrift fur Metallkunde
- Pub Date:
- July 1976
- Bibcode:
- 1976ZMetl..67..479C
- Keywords:
-
- Binary Alloys;
- Phase Transformations;
- Semiconductors (Materials);
- Thermodynamic Properties;
- Enthalpy;
- Entropy;
- Free Energy;
- Gallium Antimonides;
- Gallium Arsenides;
- Gallium Phosphides;
- Indium Antimonides;
- Indium Arsenides;
- Indium Phosphides;
- Molecular Interactions;
- Solid Solutions;
- Solid-State Physics