Appearance of flaws in layers of AlxGa1-xSb solid solutions during epitaxial growth from the liquid phase
Layers of AlxGa1-xSb (x≤0.7) solid solutions were grown epitaxially from the liquid phase on substrates of gallium antimonide. Aluminum was added to the melt during the buildup of an epitaxial layer. In these layers were found inclusions of the solvent as well as regions of localized chemical inhomogeneities. It is shown here that the appearance of such flaws is intimately related to the relief which the GaSb substrate has formed by the time aluminum enters into the solution. A mechanism of this flaw formation is suggested.