Gold aluminum interconnect stability on thin film hybrid microcircuit substrates
Abstract
The effects of gold aluminum intermetallic growth on the stability of interconnects to thin film hybrid microcircuits were studied. Tantalum-nitride-chromium-gold was bonded using 0.031 mm aluminum 1 percent Si wire and 0.031 mm aluminum 1 percent Mg wire. These two wire types were also bonded to substrates metallized with tantalum-nitride titanium-palladium-gold. Also, gold wire (0.025 mm) was bonded to aluminum metallization. These metallization-bond systems were evaluated by subjecting the test specimens to various known temperatures and time environments followed by loop pull tests to destruction, bond shear tests to destruction, and four-point probe electrical resistance measurements. The data show that the electrical resistance increases drastically long before mechanical integrity is degraded. The results of aging gold wire bonding to aluminum metallized substrates are described.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- April 1976
- Bibcode:
- 1976STIN...7719332B
- Keywords:
-
- Aluminum;
- Electric Connectors;
- Gold;
- Hybrid Circuits;
- Microelectronics;
- Thin Films;
- Aging (Materials);
- Bonding;
- Intermetallics;
- Temperature Effects;
- Wire;
- Electronics and Electrical Engineering