Development of a production technology for Hall generators with evaporated InSb and InAs films

A production technology for Hall probes was developed involving the evaporation of heteroepitaxial InAs and InSb thin films on semi-insulating GaAs or sapphire substrates, division of the films into useful Hall system configurations, and evaporation and evaluation of different contact material combinations. With the aid of this technology, InAs Hall probes in particular can be produced with properties which are superior to commercial thin film Hall probes. With respect to sensitivity and resistance to thermal shocks, they surpass considerably bulk material Hall probes. The relatively high prices of semi-insulating GaAs and sapphire restrict the application of Hall probes to special uses.