Investigation and modeling of 'kink' related phenomena in n-channel MOS/SOS transistors

Kink related phenomena, strongly manifest in the electrical characteristics of heavily-doped MOS silicon-on-sapphire (SOS) transistors, are investigated. The Kink in drain current-voltage characteristics and snap-action behavior in drain current-gate voltage characteristics are analyzed and modeled in terms of an expanded form of the Baum drift velocity saturation formulation. The impact of these phenomena upon CMOS/SOS inverter characteristics is also explored. Model predictions are compared with experimental results over a broad range of operating conditions. Satisfactory agreement with experimental data is demonstrated for the model.